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2014-03-12 rev.2.0 SSM6H19NU 1 composite devices silicon n-channel mos/epitaxial schottky barrier SSM6H19NU SSM6H19NU SSM6H19NU SSM6H19NU start of commercial production 2013-12 1. 1. 1. 1. applications applications applications applications ? dc-dc converters 2. 2. 2. 2. features features features features (1) n-channel mosfet and a schottky barrier diode in one package. 2.1. 2.1. 2.1. 2.1. mosfet features mosfet features mosfet features mosfet features (1) low drain-source on-resistance : r ds(on) = 160 m ? (typ.) (@v gs = 3.6 v) (2) 1.8-v gate drive voltage. 2.2. 2.2. 2.2. 2.2. diode features diode features diode features diode features (1) low forward voltage: v f = 0.51 v (typ.) (@i f = 500 ma) 3. 3. 3. 3. packaging and internal circuit packaging and internal circuit packaging and internal circuit packaging and internal circuit 1.anode 2.nc 3.drain 4.source 5.gate 6.cathode 4. 4. 4. 4. absolute maximum ratings (note) absolute maximum ratings (note) absolute maximum ratings (note) absolute maximum ratings (note) 4.1. 4.1. 4.1. 4.1. absolute maximum ratings of the mosfet absolute maximum ratings of the mosfet absolute maximum ratings of the mosfet absolute maximum ratings of the mosfet (unless otherwise specified, t (unless otherwise specified, t (unless otherwise specified, t (unless otherwise specified, t a a a a = 25 = 25 = 25 = 25 ) ) ) ) characteristics drain-source voltage gate-source voltage drain current drain current (pulsed) channel temperature (note 1) (note 1) symbol v dss v gss i d i dp t ch rating 40 12 2.0 4.0 150 unit v a note 1: ensure that the channel temperature does not exceed 150 . udfn6
2014-03-12 rev.2.0 SSM6H19NU 2 4.2. 4.2. 4.2. 4.2. absolute maximum ratings of the diode (unless otherwise specified, t absolute maximum ratings of the diode (unless otherwise specified, t absolute maximum ratings of the diode (unless otherwise specified, t absolute maximum ratings of the diode (unless otherwise specified, t a a a a = 25 = 25 = 25 = 25 ) ) ) ) characteristics reverse voltage average rectified current non-repetitive peak forward surge current junction temperature (t = 10 ms) symbol v r i o i fsm t j rating 40 500 5 125 unit v ma a 4.3. 4.3. 4.3. 4.3. absolute maximum ratings of the common section absolute maximum ratings of the common section absolute maximum ratings of the common section absolute maximum ratings of the common section (unless otherwise specified, t (unless otherwise specified, t (unless otherwise specified, t (unless otherwise specified, t a a a a = 25 = 25 = 25 = 25 ) ) ) ) characteristics power dissipation power dissipation storage temperature (t = 10 s) (note 1) (note 1) symbol p d t stg rating 1 2 -55 to 150 unit w note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook ("handling precautions"/"derating concept and methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). note 1: p d for the entire ic device mounted on a 25.4 mm 25.4 mm 1.6 mm fr-4 glass epoxy board (cu pad: 645 mm 2 ) note: the mosfets in this device are sensitive to electrostatic discharge. when handling this device, the worktables, operators, soldering irons and other objects should be protected against anti-static discharge. note: the channel-to-ambient thermal resistance, r th(ch-a) , and the drain power dissipation, p d , vary according to the board material, board area, board thickness and pad area. when using this device, be sure to take heat dissipation fully into account.
2014-03-12 rev.2.0 SSM6H19NU 3 5. 5. 5. 5. electrical characteristics electrical characteristics electrical characteristics electrical characteristics 5.1. 5.1. 5.1. 5.1. static characteristics of the mosfet (unless otherwise specified, t static characteristics of the mosfet (unless otherwise specified, t static characteristics of the mosfet (unless otherwise specified, t static characteristics of the mosfet (unless otherwise specified, t a a a a = 25 = 25 = 25 = 25 ) ) ) ) characteristics gate leakage current drain cut-off current drain-source breakdown voltage drain-source breakdown voltage gate threshold voltage drain-source on-resistance forward transfer admittance (note 1) (note 2) (note 3) (note 3) symbol i gss i dss v (br)dss v (br)dsx v th r ds(on) |y fs | test condition v gs = 10 v, v ds = 0 v v ds = 40 v, v gs = 0 v i d = 1 ma, v gs = 0 v i d = 1 ma, v gs = -12 v v ds = 3 v, i d = 1 ma i d = 1.0 a, v gs = 8.0 v i d = 1.0 a, v gs = 4.5 v i d = 1.0 a, v gs = 4.2 v i d = 1.0 a, v gs = 3.6 v i d = 0.5 a, v gs = 2.5 v i d = 0.2 a, v gs = 1.8 v v ds = 3 v, i d = 200 ma min 40 25 0.5 typ. 145 155 156 160 180 220 2 max 10 1 1.2 185 198 201 208 238 390 unit a v m ? s note 1: if a reverse bias is applied between gate and source, this device enters v (br)dsx mode. note that the drain- source breakdown voltage is lowered in this mode. note 2: let v th be the voltage applied between gate and source that causes the drain current (i d ) to below (1 ma for this device). then, for normal switching operation, v gs(on) must be higher than v th , and v gs(off) must be lower than v th . this relationship can be expressed as: v gs(off) < v th < v gs(on) . take this into consideration when using the device. note 3: pulse measurement. 5.2. 5.2. 5.2. 5.2. dynamic characteristics of the mosfet (unless otherwise specified, t dynamic characteristics of the mosfet (unless otherwise specified, t dynamic characteristics of the mosfet (unless otherwise specified, t dynamic characteristics of the mosfet (unless otherwise specified, t a a a a = 25 = 25 = 25 = 25 ) ) ) ) characteristics input capacitance reverse transfer capacitance output capacitance switching time (turn-on time) switching time (turn-off time) symbol c iss c rss c oss t on t off test condition v ds = 10 v, v gs = 0 v, f = 1 mhz v dd = 10 v, i d = 0.5 a, v gs = 0 v to 2.5 v, r g = 4.7 ? , see figure 5.2.1, 5.2.2. min typ. 130 7.5 26 13 8 max unit pf ns fig. fig. fig. fig. 5.2.1 5.2.1 5.2.1 5.2.1 test circuit of switching time test circuit of switching time test circuit of switching time test circuit of switching time fig. fig. fig. fig. 5.2.2 5.2.2 5.2.2 5.2.2 input waveform/output waveform input waveform/output waveform input waveform/output waveform input waveform/output waveform
2014-03-12 rev.2.0 SSM6H19NU 4 5.3. 5.3. 5.3. 5.3. gate charge characteristics of the mosfet gate charge characteristics of the mosfet gate charge characteristics of the mosfet gate charge characteristics of the mosfet (unless otherwise specified, t (unless otherwise specified, t (unless otherwise specified, t (unless otherwise specified, t a a a a = 25 = 25 = 25 = 25 ) ) ) ) characteristics total gate charge (gate-source plus gate-drain) symbol q g test condition v dd = 10 v, i d = 1.8 a v gs = 4.2 v v dd = 10 v, i d = 1.8 a v gs = 3.6 v v dd = 10 v, i d = 1.8 a v gs = 2.5 v min typ. 1.1 1.0 0.75 max 2.2 2.0 1.5 unit nc 5.4. 5.4. 5.4. 5.4. source-drain characteristics of the mosfet source-drain characteristics of the mosfet source-drain characteristics of the mosfet source-drain characteristics of the mosfet (unless otherwise specified, t (unless otherwise specified, t (unless otherwise specified, t (unless otherwise specified, t a a a a = 25 = 25 = 25 = 25 ) ) ) ) characteristics diode forward voltage (note 1) symbol v dsf test condition i d = -2.0 a, v gs = 0 v min typ. -0.85 max -1.2 unit v note 1: pulse measurement.
2014-03-12 rev.2.0 SSM6H19NU 5 5.5. 5.5. 5.5. 5.5. characteristics of the diode (unless otherwise specified, t characteristics of the diode (unless otherwise specified, t characteristics of the diode (unless otherwise specified, t characteristics of the diode (unless otherwise specified, t a a a a = 25 = 25 = 25 = 25 ) ) ) ) characteristics forward voltage reverse current total capacitance symbol v f (1) v f (2) i r c t test condition i f = 100 ma i f = 500 ma v r = 40 v v r = 0 v, f = 1 mhz min typ. 0.31 0.51 42 max 0.35 0.57 50 unit v a pf 6. 6. 6. 6. marking marking marking marking fig. fig. fig. fig. 6.1 6.1 6.1 6.1 marking marking marking marking fig. fig. fig. fig. 6.2 6.2 6.2 6.2 pin condition(top view) pin condition(top view) pin condition(top view) pin condition(top view)
2014-03-12 rev.2.0 SSM6H19NU 6 7. 7. 7. 7. characteristics curves (note) characteristics curves (note) characteristics curves (note) characteristics curves (note) 7.1. 7.1. 7.1. 7.1. characteristics curves of the mosfet characteristics curves of the mosfet characteristics curves of the mosfet characteristics curves of the mosfet fig. fig. fig. fig. 7.1.1 7.1.1 7.1.1 7.1.1 i i i i d d d d - v - v - v - v ds ds ds ds fig. fig. fig. fig. 7.1.2 7.1.2 7.1.2 7.1.2 i i i i d d d d - v - v - v - v gs gs gs gs fig. fig. fig. fig. 7.1.3 7.1.3 7.1.3 7.1.3 r r r r ds(on) ds(on) ds(on) ds(on) - v - v - v - v gs gs gs gs fig. fig. fig. fig. 7.1.4 7.1.4 7.1.4 7.1.4 r r r r ds(on) ds(on) ds(on) ds(on) - v - v - v - v gs gs gs gs fig. fig. fig. fig. 7.1.5 7.1.5 7.1.5 7.1.5 r r r r ds(on) ds(on) ds(on) ds(on) - i - i - i - i d d d d fig. fig. fig. fig. 7.1.6 7.1.6 7.1.6 7.1.6 r r r r ds(on) ds(on) ds(on) ds(on) - t - t - t - t a a a a
2014-03-12 rev.2.0 SSM6H19NU 7 fig. fig. fig. fig. 7.1.7 7.1.7 7.1.7 7.1.7 v v v v th th th th - t - t - t - t a a a a fig. fig. fig. fig. 7.1.8 7.1.8 7.1.8 7.1.8 |y |y |y |y fs fs fs fs | - i | - i | - i | - i d d d d fig. fig. fig. fig. 7.1.9 7.1.9 7.1.9 7.1.9 i i i i dr dr dr dr - v - v - v - v ds ds ds ds fig. fig. fig. fig. 7.1.10 7.1.10 7.1.10 7.1.10 c - v c - v c - v c - v ds ds ds ds fig. fig. fig. fig. 7.1.11 7.1.11 7.1.11 7.1.11 t - i t - i t - i t - i d d d d fig. fig. fig. fig. 7.1.12 7.1.12 7.1.12 7.1.12 dynamic input characteristics dynamic input characteristics dynamic input characteristics dynamic input characteristics
2014-03-12 rev.2.0 SSM6H19NU 8 7.2. 7.2. 7.2. 7.2. characteristics curves of the diode characteristics curves of the diode characteristics curves of the diode characteristics curves of the diode fig. fig. fig. fig. 7.2.1 7.2.1 7.2.1 7.2.1 i i i i f f f f - v - v - v - v f f f f fig. fig. fig. fig. 7.2.2 7.2.2 7.2.2 7.2.2 i i i i r r r r - v - v - v - v r r r r fig. fig. fig. fig. 7.2.3 7.2.3 7.2.3 7.2.3 c c c c t t t t - v - v - v - v r r r r
2014-03-12 rev.2.0 SSM6H19NU 9 7.3. 7.3. 7.3. 7.3. characteristics curves of the mosfet characteristics curves of the mosfet characteristics curves of the mosfet characteristics curves of the mosfet diodes common diodes common diodes common diodes common fig. fig. fig. fig. 7.3.1 7.3.1 7.3.1 7.3.1 r r r r th th th th - t - t - t - t w w w w fig. fig. fig. fig. 7.3.2 7.3.2 7.3.2 7.3.2 p p p p d d d d - t - t - t - t a a a a note: the above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted.
2014-03-12 rev.2.0 SSM6H19NU 10 package dimensions package dimensions package dimensions package dimensions unit: mm weight: 8.5 mg (typ.) package name(s) nickname: udfn6
2014-03-12 rev.2.0 SSM6H19NU 11 restrictions on product use restrictions on product use restrictions on product use restrictions on product use ? toshiba corporation, and its subsidiaries and affiliates (collectively "toshiba"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "product") without notice. ? this document and any information herein may not be reproduced without prior written permission from toshiba. even with toshiba's written permission, reproduction is permissible only if reproduction is without alteration/omission. ? though toshiba works continually to improve product's quality and reliability, product can malfunction or fail. customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. before customers use the product, create designs including the product, or incorporate the product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant toshiba information, including without limitation, this document, the specifications, the data sheets and application notes for product and the precautions and conditions set forth in the "toshiba semiconductor reliability handbook" and (b) the instructions for the application with which the product will be used with or for. customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. toshiba assumes no liability for customers' product design or applications. toshiba assumes no liability for customers' product design or applications. toshiba assumes no liability for customers' product design or applications. toshiba assumes no liability for customers' product design or applications. ? product is neither intended nor warranted for use in equipments or systems that require product is neither intended nor warranted for use in equipments or systems that require product is neither intended nor warranted for use in equipments or systems that require product is neither intended nor warranted for use in equipments or systems that require extraordinarily high levels of quality and/or reliability, and/or a malfunction or failure of which may extraordinarily high levels of quality and/or reliability, and/or a malfunction or failure of which may extraordinarily high levels of quality and/or reliability, and/or a malfunction or failure of which may extraordinarily high levels of quality and/or reliability, and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage and/or serious public impact cause loss of human life, bodily injury, serious property damage and/or serious public impact cause loss of human life, bodily injury, serious property damage and/or serious public impact cause loss of human life, bodily injury, serious property damage and/or serious public impact ("unintended use"). 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